Ion etching effects at interfaces of semiconductor III-V/III-V and II-VI/III-V heterostructures in SIMS depth profiling

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作者：
Konarski, P. [1 ]
Herman, M.A. [1 ]
Kozhukhov, A.V. [1 ]
机构：
[1] Inst of Vacuum Technology, Warszawa, Poland
来源：
Electron Technology (Warsaw) | 1996年 / 29卷 / 2-3期
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页码：277 / 282
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