THREE-DIMENSIONAL HIGH-VOLTAGE CMOS UTILIZING A LASER-RECRYSTALLIZED SOI LAYER.

被引：0
|
作者：
Sasaki, N. [1 ]
Kawamura, S. [1 ]
Kawai, S. [1 ]
Shirato, T. [1 ]
Aneha, M. [1 ]
Nakano, M. [1 ]
机构：
[1] Fujitsu Ltd, Kawasaki, Jpn, Fujitsu Ltd, Kawasaki, Jpn
来源：
IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 11期
关键词：
INTEGRATED CIRCUITS; VLSI - Fabrication - LASER BEAMS - Applications;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A flat-panel display driver fabricated with a 3-D IC technology which integrates a low-voltage bulk CMOS control-unit with high-voltage offset-gate SOI-MOS output circuits with a simple fabrication process is described. Performance results are given.
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