Silicon dioxide films produced by PECVD of TEOS and TMCTS

被引:0
|
作者
Webb, D.A.
Lane, A.P.
Tang, T.E.
机构
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] MODELING THE PROPERTIES OF PECVD SILICON DIOXIDE FILMS USING OPTIMIZED BACKPROPAGATION NEURAL NETWORKS
    HAN, SS
    CEILER, M
    BIDSTRUP, SA
    KOHL, P
    MAY, G
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A, 1994, 17 (02): : 174 - 182
  • [22] DOWN STREAM PECVD DEPOSITION OF SILICON DIOXIDE FILMS ON INP WITH IMPROVED INTERFACE PROPERTIES
    KULISCH, W
    KASSING, R
    FIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES, 1989, 1144 : 259 - 267
  • [23] Analysis of TEOS silicon dioxide: The identification of carbonatious contaminants
    da Silva, MLP
    Cardoso, AR
    Santiago-Aviles, JJ
    ELECTRICALLY BASED MICROSTRUCTURAL CHARACTERIZATION II, 1998, 500 : 97 - 100
  • [24] Structural analysis of silicon dioxide and silicon oxynitride films produced using an oxygen plasma
    Buiu, O
    Kennedy, GP
    Gartner, M
    Taylor, S
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 1998, 26 (06) : 1700 - 1712
  • [25] Deposition of thick TEOS PECVD silicon oxide layers for integrated optical waveguide applications
    Bulla, DAP
    Morimoto, NI
    THIN SOLID FILMS, 1998, 334 (1-2) : 60 - 64
  • [26] Polymorphous silicon films produced in large area reactors by PECVD at 27.12 MHz and 13.56 MHz
    Aguas, H
    Raniero, L
    Pereira, L
    Fortunato, E
    Cabarrocas, PRI
    Martins, R
    AMORPHOUS AND NANOCRYSTALLINE SILICON-BASED FILMS-2003, 2003, 762 : 589 - 594
  • [27] Ultrathin silicon dioxide films produced by thermal oxidation: Properties and composition
    Safarov, AS
    Normuradov, MT
    RADIOTEKHNIKA I ELEKTRONIKA, 1997, 42 (03): : 371 - 373
  • [28] The effect of TEOS plasma parameters on the silicon dioxide deposition mechanisms
    Abbasi-Firouzjah, Marzieh
    Hosseini, Seyed-Iman
    Shariat, Mahdi
    Shokri, Babak
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2013, 368 : 86 - 92
  • [29] Calculation of apparent activation energy for the deposition of TEOS-SiO2 films by PECVD
    Materials and Corrosion Lab., Korea Elec. Pwr. Res. Inst., 305-380, Taejon, Korea, Republic of
    Thin Solid Films, 1-2 (112-116):
  • [30] LPCVD OF SILICON DIOXIDE BY PYROLYSIS OF TEOS IN A RAPID THERMAL PROCESSOR
    MILLER, R
    OZTURK, MC
    WORTMAN, JJ
    JOHNSON, FS
    GRIDER, DT
    MATERIALS LETTERS, 1989, 8 (09) : 353 - 356