Preparation of high-quality Ge substrate for MBE

被引：0
|
作者：
Keio Univ, Yokohama, Japan [1 ]
机构：
来源：
Appl Surf Sci | / 2卷 / 303-305期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] High-quality GaN grown by gas-source MBE
    Wang, JX
    Sun, DZ
    Wang, XL
    Li, JM
    Zeng, YP
    Hou, X
    Lin, LY
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 386 - 389
  • [22] High-quality large-area MBE HgCdTe/Si
    J. M. Peterson
    J. A. Franklin
    M. Reddy
    S. M. Johnson
    E. Smith
    W. A. Radford
    I. Kasai
    Journal of Electronic Materials, 2006, 35 : 1283 - 1286
  • [23] High-quality metamorphic HEMT grown on GaAs substrates by MBE
    Zeng, YP
    Cao, X
    Cui, LJ
    Kong, MY
    Pan, L
    Wang, BQ
    Zhu, ZP
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 210 - 213
  • [24] LOW-TEMPERATURE MBE GROWTH OF HIGH-QUALITY ALGAAS
    SHIRAKI, Y
    MISHIMA, T
    MORIOKA, M
    JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 164 - 168
  • [25] PREPARATION OF HIGH-QUALITY CARBONATED WATER
    不详
    CHEMIKER-ZEITUNG, 1987, 111 (05): : A70 - A70
  • [26] PREPARATION OF HIGH-QUALITY POLYPYRROLE FILMS
    NAKAZAWA, Y
    EBINE, T
    KUSUNOKI, M
    NISHIZAWA, H
    HANNA, J
    KOKADO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (07): : 1304 - 1309
  • [27] Annealing effects of a high-quality ZnTe substrate
    Yoshino, K
    Yoneta, M
    Ohmori, K
    Saito, H
    Ohishi, M
    Yabe, T
    JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (06) : 579 - 582
  • [28] Annealing effects of a high-quality ZnTe substrate
    Kenji Yoshino
    Minoru Yoneta
    Kenzo Ohmori
    Hiroshi Saito
    Masakazu Ohishi
    Takayuki Yabe
    Journal of Electronic Materials, 2004, 33 : 579 - 582
  • [29] High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth
    Miyao, Masanobu
    Toko, Kaoru
    Tanaka, Takanori
    Sadoh, Taizoh
    APPLIED PHYSICS LETTERS, 2009, 95 (02)
  • [30] MBE growth of high quality cubic GaN an GaAs substrate
    Chen, H
    Liu, HF
    Li, ZQ
    Liu, S
    Huang, Q
    Zhou, JM
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 34 : S1 - S3
12345