Non-equilibrium electron dynamics phenomena in scaled sub-100 nm gate length metal semiconductor field effect transistors: gate-fringing, velocity overshoot, and short-channel tunneling

被引：0
|
作者：
Kangnam Univ, Kyungki-do, Korea, Republic of [1 ]
机构：
来源：
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 9 A卷 / 4672-4679期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 49 条
  • [41] A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors
    Wang, Hsin-Kai
    Wu, Sean
    Chiang, Te-Kuang
    Lee, Maw-Shung
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (05)
  • [42] A two-dimensional model for the subthreshold swing of short-channel double-gate metal-oxide-semiconductor field effect transistors with a vertical Gaussian-like doping profile
    Dubey, Sarvesh
    Tiwari, Pramod Kumar
    Jit, S.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (05)
  • [43] The characteristics of sub-10 nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors
    Jang, Moongyu
    Lee, Seongjae
    THIN SOLID FILMS, 2012, 520 (06) : 2166 - 2169
  • [44] Electron Substrate and Gate Current Modeling for Single-Drain Buried-Channel p-Type Metal-Oxide-Semiconductor Field-Effect Transistors Including Tunneling Mechanisms
    Sheu, Chorng-Jye
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (11) : 8248 - 8252
  • [45] Analysis of electron Tunneling components in p+ poly-gate p-channel metal-oxide-semiconductor field-effect transistors from direct tunneling region to Fowler-Nordheim region
    Kang, Ting-Kuo
    Wu, San-Lein
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (5B): : 3193 - 3196
  • [46] A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a vertical Gaussian-like doping profile
    Dubey, Sarvesh
    Tiwari, Pramod Kumar
    Jit, S.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (03)
  • [47] Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width
    Kang, Yuye
    Xu, Shengqiang
    Han, Kaizhen
    Kong, Eugene Y-J
    Song, Zhigang
    Luo, Sheng
    Kumar, Annie
    Wang, Chengkuan
    Fan, Weijun
    Liang, Gengchiau
    Gong, Xiao
    NANO LETTERS, 2021, 21 (13) : 5555 - 5563
  • [48] A detailed coupled-mode-space non-equilibrium Green's function simulation study of source-to-drain tunnelling in gate-all-around Si nanowire metal oxide semiconductor field effect transistors
    Seoane, N.
    Martinez, A.
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (10)
  • [49] A Low Damage Etching Process of Sub-100 nm Platinum Gate Line for III-V Metal-Oxide-Semiconductor Field-Effect Transistor Fabrication and the Optical Emission Spectrometry of the Inductively Coupled Plasma of SF6/C4F8
    Li, Xu
    Zhou, Haiping
    Hill, Richard J. W.
    Holland, Martin
    Thayne, Iain G.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (01)
12345