Non-equilibrium electron dynamics phenomena in scaled sub-100 nm gate length metal semiconductor field effect transistors: gate-fringing, velocity overshoot, and short-channel tunneling

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Kangnam Univ, Kyungki-do, Korea, Republic of [1 ]
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Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 9 A卷 / 4672-4679期
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