Effects of high-temperature anneals on 4H-SiC Implanted with Al or Al and Si

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[1] Jones, K.A.
[2] Shah, P.B.
[3] Zheleva, T.S.
[4] Ervin, M.H.
[5] Derenge, M.A.
[6] Freitas, J.A.
[7] Harmon, S.
[8] McGee, J.
[9] Vispute, R.D.
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Jones, K.A. (kajones@arl.army.mil) | 1600年 / American Institute of Physics Inc.卷 / 96期
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