Monotone iterative method and adaptive finite volume method for parallel numerical simulation of submicron MOSFET devices

In this paper, we apply our proposed early parallel adaptive computing methodology for numerical solution of semiconductor device equations with triangular meshing technique. This novel simulation based on adaptive triangular mesh, finite volume, monotone iterative, and a posteriori error estimation methods, is developed and successfully implemented on a Linux-cluster with message passing interface (MPI) library. Parallel adaptive computing with triangular mesh has its flexibility to simulate multidimensional semiconductor devices with highly complicated geometry. Our approach fully exploits the inherent parallelism of the triangular mesh finite volume as well as monotone iterative methods for semiconductor drift diffusion equations on a Linux-cluster parallel computing system. Parallel simulation results demonstrate an excellent speedup with respect to the number of processors. Benchmarks and numerical results for a submicron N-MOSFET device are also presented to show the robustness and efficiency of the method.