Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces

被引：0
|
作者：
Henini, M.
Sanguinetti, S.
Brusaferri, L.
Grilli, E.
Guzzi, M.
Upward, M.D.
Moriarty, P.
Beton, P.H.
机构：
[1] Department of Physics, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom
[2] I.N.F.M., Dipartimento di Fisica, Universita' degli Studi, Via Celoria 16, I-20133 Milano, Italy
来源：
Microelectronics Journal | / 28卷 / 8-10期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：933 / 938
相关论文
共 50 条
  • [31] Saturated dot density of InAs/GaAs self-assembled quantum dots grown at high growth rate
    Chia, C. K.
    Zhang, Y. W.
    Wong, S. S.
    Yong, A. M.
    Chow, S. Y.
    Chua, S. J.
    Guo, J.
    APPLIED PHYSICS LETTERS, 2007, 90 (16)
  • [32] Polarized cathodoluminescence study of selectively grown self-assembled InAs/GaAs quantum dots
    Rich, DH
    Tang, Y
    Konkar, A
    Chen, P
    Madhukar, A
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (11) : 6337 - 6344
  • [33] Spontaneously ordered InAs self-assembled quantum dots grown on GaAs/InP substrate
    Wang, BZ
    Peng, YH
    Zhao, FH
    Chen, WY
    Liu, SY
    Gao, CX
    JOURNAL OF CRYSTAL GROWTH, 1998, 186 (1-2) : 43 - 47
  • [34] Site-controlled self-assembled InAs quantum dots grown on GaAs substrates
    Lin, Shih-Yen
    Tseng, Chi-Che
    Chung, Tung-Hsun
    Liao, Wen-Hsuan
    Chen, Shu-Han
    Chyi, Jen-Inn
    NANOTECHNOLOGY, 2010, 21 (29)
  • [35] Electrical characterization of self-assembled InAs/GaAs quantum dots by capacitance techniques
    Gombia, E
    Mosca, R
    Frigeri, P
    Franchi, S
    Amighetti, S
    Ghezzi, C
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 393 - 397
  • [36] Structural and optical properties of InAs-GaAs quantum dots subjected to high temperature annealing
    Kosogov, AO
    Werner, P
    Gosele, U
    Ledentsov, NN
    Bimberg, D
    Ustinov, VM
    Egorov, AY
    Zhukov, AE
    Kopev, PS
    Bert, NA
    Alferov, ZI
    APPLIED PHYSICS LETTERS, 1996, 69 (20) : 3072 - 3074
  • [37] Scanning near-field photoluminescence mapping of (110)InAs-GaAs self-assembled quantum dots
    Hadjipanayi, M
    Maciel, AC
    Ryan, JF
    Wasserman, D
    Lyon, SA
    APPLIED PHYSICS LETTERS, 2004, 85 (13) : 2535 - 2537
  • [38] Effects of rapid thermal annealing on the structural and optical properties of InAs/GaAs self-assembled quantum dots
    Cho, S
    Hyon, CK
    Kim, EK
    Min, SK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (12B): : 7165 - 7168
  • [39] Effect of boron on the surface and optical properties for (B) InAs/GaAs self-assembled quantum dots grown by MOCVD
    Wang, Pengyu
    Wang, Qi
    Guo, Xin
    Jia, Zhigang
    Li, Tianhe
    Ren, Xiaomin
    Cai, Shiwei
    2011 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE AND EXHIBITION (ACP), 2012,
  • [40] Self-assembled InAs/GaAs quantum dots and quantum dot laser
    Wang, ZG
    Liu, FQ
    Liang, JB
    Xu, B
    SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY, 2000, 43 (08): : 861 - 870
12345