Generation of CMOS voltage-controlled floating resistors

被引：0
|
作者：
Mahmoud, Soliman A. [1 ]
Elwan, Hassan O. [1 ]
Soliman, Ahmed M. [1 ]
机构：
[1] Electronics and Commun. Eng. Dept., Cairo University, Giza, Egypt
来源：
Microelectronics Journal | / 28卷 / 6-8期
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摘要：
A new generation method to implement CMOS floating resistors is presented. The generation method depends on the linearization of the differential current of two matched NMOS transistors in two alternative configurations. The CMOS floating resistors implemented are based on using MOS transistors operating in the saturation region with their sources connected to their substrates. New CMOS floating resistors using the proposed design method are given. The magnitude of each of the proposed CMOS floating resistors is tuned by a control voltage. PSpice simulation results of the new proposed CMOS floating resistors indicating the linearity range are also given. © 1997 Elsevier Science Ltd.
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页码：627 / 640
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