Microwave characteristics analysis of coplanar electrodes in III-V semiconductors traveling-wave modulators

被引：0
|
作者：
Zhejiang Univ, Hangzhou, China [1 ]
机构：
来源：
Tien Tzu Hsueh Pao | / 8卷 / 18-22期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
引用
收藏
相关论文
共 50 条
  • [31] Microwave characterization of lithium niobate electrooptic modulators with traveling wave electrodes
    Alam, M. Shah
    Hassan, M. Khaled
    Ali, M. Sakawat
    2008 INTERNATIONAL CONFERENCE ON COMPUTER AND COMMUNICATION ENGINEERING, VOLS 1-3, 2008, : 118 - +
  • [32] Nonlinearity of traveling-wave electroabsorption modulator according to microwave characteristics
    Yun, YS
    Choi, DH
    Choi, YW
    OPTICAL AND QUANTUM ELECTRONICS, 2003, 35 (06) : 615 - 628
  • [33] Nonlinearity of traveling-wave electroabsorption modulator according to microwave characteristics
    Y.-S. Yun
    D.-H. Choi
    Y.-W. Choi
    Optical and Quantum Electronics, 2003, 35 : 615 - 628
  • [34] High-speed traveling-wave electrodes for polymeric electro-optic modulators
    Han, Z
    Tang, SN
    An, DC
    Sun, L
    Lu, XJ
    Shi, Z
    Zhou, Q
    Chen, RT
    OPTOELECTRONIC INTERCONNECTS VI, 1999, 3632 : 354 - 362
  • [35] 25-GHz polarization-insensitive electroabsorption modulators with traveling-wave electrodes
    Zhang, SZ
    Chiu, YJ
    Abraham, P
    Bowers, JE
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (02) : 191 - 193
  • [36] Effect of microwave loss rand device length on the linear characteristics of traveling-wave coplanar-waveguide electroabsorption modulator
    Kong, SC
    Lee, JH
    Lee, SJ
    Cho, WS
    Lim, YS
    Choi, YW
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 2000, 3944 : 910 - 918
  • [37] DRY-ETCHING CHARACTERISTICS OF III-V SEMICONDUCTORS IN MICROWAVE BCL3 DISCHARGES
    PEARTON, SJ
    HOBSON, WS
    ABERNATHY, CR
    REN, F
    FULLOWAN, TR
    KATZ, A
    PERLEY, AP
    PLASMA CHEMISTRY AND PLASMA PROCESSING, 1993, 13 (02) : 311 - 332
  • [38] FINITE-ELEMENT METHOD FOR THE IMPEDANCE ANALYSIS OF TRAVELING-WAVE MODULATORS
    YI, JC
    KIM, SH
    CHOI, SS
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1990, 8 (06) : 817 - 822
  • [39] POTENTIODYNAMIC MEASUREMENTS AT SEMICONDUCTOR ELECTRODES - BINARY III-V COMPOUND SEMICONDUCTORS
    ROMANOV, OV
    SOVIET ELECTROCHEMISTRY, 1983, 19 (02): : 132 - 139
  • [40] Experimental analysis of microwave loss due to substrate carrier concentration in traveling-wave electro-optic modulators
    Khazaei, HR
    Berolo, O
    Wang, W
    Maigné, P
    Young, M
    Ozard, K
    Reeves, M
    Ghannouchi, FM
    APPLICATIONS OF PHOTONIC TECHNOLOGY 3, 1998, 3491 : 90 - 95
12345