SIMS and XPS studies of GaN epilayers grown on Si substrates

被引：0
|
作者：
Zhang, Haoxiang [1 ]
Ye, Zhizhen [1 ]
Zhao, Binghui [1 ]
Yuan, Jun [1 ]
机构：
[1] Zhejiang Univ, Hangzhou, China
来源：
Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology | 1999年 / 19卷 / 05期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
7
引用
收藏
页码：345 / 348
相关论文
共 50 条
  • [21] Structural and optical characterization of GaN epilayers grown on Si(111) substrates by hydride vapor-phase epitaxy
    Zhang, JX
    Qu, Y
    Chen, YZ
    Uddin, A
    Yuan, S
    JOURNAL OF CRYSTAL GROWTH, 2005, 282 (1-2) : 137 - 142
  • [22] GaN epilayers on misoriented substrates
    Trager-Cowan, C
    McArthur, S
    Middleton, PG
    O'Donnell, KP
    Zubia, D
    Hersee, SD
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3): : 235 - 238
  • [23] Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers
    Talwar, Devki N.
    Lin, Hao-Hsiung
    Feng, Zhe Chuan
    MATERIALS CHEMISTRY AND PHYSICS, 2020, 252
  • [24] DEPTH-RESOLVED CATHODOLUMINESCENCE IN GAAS EPILAYERS GROWN ON SI SUBSTRATES
    WATANABE, Y
    KADOTA, Y
    OKAMOTO, H
    OHMACHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1989, 28 (01): : 16 - 20
  • [25] Effects of hydrogenation and annealing on the deep levels in GaN epilayers grown on sapphire substrates
    Kang, TW
    Yuldashev, SU
    Kim, DY
    Kim, TW
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (1AB): : L25 - L27
  • [26] Dislocation Defects in GaN Epilayers Grown on Si (100) Substrates by Metal-organic Chemical-vapor Deposition
    Park, Young S.
    Kwon, Y. H.
    Im, Hyunsik
    Jung, Woong
    Kim, Hyungsang
    Kim, Minseon
    Yang, W. C.
    Lee, Junho
    Choi, Hong Goo
    Roh, Cheong Hyun
    Hahn, Cheol-Koo
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 56 (04) : 1172 - 1175
  • [27] Effects of hydrogenation and annealing on the deep levels in GaN epilayers grown on sapphire substrates
    Kang, Tae Won
    Yuldashev, Shavkat U.
    Kim, Duek Young
    Kim, Tae Whan
    Japanese Journal of Applied Physics, Part 2: Letters, 2000, 39 (1 A/B):
  • [28] In-plane anisotropy characteristics of GaN epilayers grown on A -face sapphire substrates
    Centre De Recherche Sur l'Htro-Epitaxie Et Ses Applications, Centre National De La Recherche Scientifique , Rue B. Gregory, F-06560 Valbonne, Sophia Antipolis, France
    不详
    不详
    Journal of Applied Physics, 2008, 104 (11):
  • [29] Thermal Properties of GaN Films Grown on Si Substrates
    M. Cervantes-Contreras
    C. A. Quezada-Maya
    C. Mejía-García
    M. López-López
    G. González de la Cruz
    M. Tamura
    International Journal of Thermophysics, 2009, 30 : 591 - 598
  • [30] Thermal Properties of GaN Films Grown on Si Substrates
    Cervantes-Contreras, M.
    Quezada-Maya, C. A.
    Mejia-Garcia, C.
    Lopez-Lopez, M.
    Gonzalez de la Cruz, G.
    Tamura, M.
    INTERNATIONAL JOURNAL OF THERMOPHYSICS, 2009, 30 (02) : 591 - 598
12345