SIMS and XPS studies of GaN epilayers grown on Si substrates

被引：0
|
作者：
Zhang, Haoxiang [1 ]
Ye, Zhizhen [1 ]
Zhao, Binghui [1 ]
Yuan, Jun [1 ]
机构：
[1] Zhejiang Univ, Hangzhou, China
来源：
Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology | 1999年 / 19卷 / 05期
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摘要：
7
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页码：345 / 348
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