Mechanisms determining three-dimensional SiGe island density on Si(001)

被引:0
|
作者
University of Wisconsin-Madison, Madison, WI 53706, United States [1 ]
机构
来源
J Electron Mater | / 5卷 / 426-431期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
18
引用
收藏
相关论文
共 50 条
  • [21] Alignment of Ge three-dimensional islands on faceted Si(001) surfaces
    Sakamoto, Kunihiro
    Matsuhata, Hirofumi
    Tanner, Martin O.
    Wang, Dawen
    Wang, Kang L.
    Thin Solid Films, 1998, 321 : 55 - 59
  • [22] Simultaneous flattening of Si(110), (111), and (001) surfaces for three-dimensional Si nanowires
    Morita, Yukinori
    Ota, Hiroyuki
    APPLIED PHYSICS LETTERS, 2012, 100 (26)
  • [23] Photoluminescence dynamics and Auger fountain in three-dimensional Si/SiGe multilayer nanostructures
    Lee, E-K
    Lockwood, D. J.
    Baribeau, J-M.
    Bratkovsky, A. M.
    Kamins, T. I.
    Tsybeskov, L.
    PHYSICAL REVIEW B, 2009, 79 (23):
  • [24] Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Effect on SiGe Light Emission
    Lockwood, D. J.
    Wu, X.
    Baribeau, J. -M.
    Mala, S. A.
    Wang, X.
    Tsybeskov, L.
    PITS & PORES 7: NANOMATERIALS - FABRICATION PROCESSES, PROPERTIES, AND APPLICATIONS, 2016, 75 (01): : 77 - 96
  • [25] Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Impact on SiGe Light Emission
    Lockwood, David J.
    Wu, Xiaohua
    Baribeau, Jean-Marc
    Mala, Selina A.
    Wang, Xiaolu
    Tsybeskov, Leonid
    FRONTIERS IN MATERIALS, 2016, 3
  • [26] Three-dimensional strain relaxation in the As/Si (001)-(2 x 1) surface
    Tanaka, Y
    Hashizume, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (01): : 256 - 262
  • [27] Interplay of dislocation network and island arrangement in SiGe films grown on Si(001)
    Teichert, C
    Hofer, C
    Lyutovich, K
    Bauer, M
    Kasper, E
    THIN SOLID FILMS, 2000, 380 (1-2) : 25 - 28
  • [28] Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers
    Shaleev, M. V.
    Novikov, A. V.
    Yurasov, D. V.
    Hartmann, J. M.
    Kuznetsov, O. A.
    Lobanov, D. N.
    Krasilnik, Z. F.
    SEMICONDUCTORS, 2013, 47 (03) : 427 - 432
  • [29] Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers
    M. V. Shaleev
    A. V. Novikov
    D. V. Yurasov
    J. M. Hartmann
    O. A. Kuznetsov
    D. N. Lobanov
    Z. F. Krasilnik
    Semiconductors, 2013, 47 : 427 - 432
  • [30] Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate
    Lin, Guangyang
    Hong, Haiyang
    Zhang, Jie
    Zhang, Yuying
    Cui, Peng
    Wang, Jianyuan
    Chen, Songyan
    Zhao, Yong
    Ni, Chaoying
    Li, Cheng
    Zeng, Yuping
    JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 858