Surface morphology of growing Al on Si(111)7×7 and Si(111)√3×√3-Al substrates by reflection high-energy electron diffraction

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Horio, Yoshimi [1 ]
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[1] Department of Applied Electronics, Daido Institute of Technology, 2-21 Daido-cho, Minami-ku, Nagoya 457-8531, Japan
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| 1600年 / JJAP, Tokyo, Japan卷 / 39期
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