Exciton Emission in ZnSe: Halfwidths, Thermal and Optical Activation Energies.

A systematic study of free and bound exciton emission versus temperature was performed upon various samples of zinc selenide. In samples annealed in selenium vapour, the I//1 and I//1//D//e//e//p lines are particularly well observed. The widths of the phonon replicas grow larger while the number of emitted phonons is increased. Channel decays for bound exciton complexes are discussed, and the effective processes are not the same as those found by previous authors for bound excitons in GaAs samples. Thermal activation energies are also found which are slightly smaller than the optical binding energies of the excitons.