Spectroscopic study of Nd-doped amorphous SiN films

被引：0

作者：

机构：

[1] Ribeiro, C.T.M.

[2] Li, M. Siu

[3] Zanatta, A.R.

来源：

Ribeiro, C.T.M. | 1600年 / American Institute of Physics Inc.卷 / 96期

关键词：

Amorphous silicon - Binding energy - Electron energy levels - Neodymium - Photoluminescence - Raman scattering - Rutherford backscattering spectroscopy - Semiconductor doping - Thin films - X ray photoelectron spectroscopy;

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摘要：

An extended and systematic spectroscopic study on Nd doped amorphous silicon-nitrogen alloys was presented. The samples, prepared in the form of thin films were submitted to cumulative thermal annealing treatments under highly controllable conditions. All the as-deposited films were found to exhibit an optical band gap of ∼5 eV which were essentially amorphous. Even after thermal annealing at 1000°C, no evidence of crystals involving either Si-Si or Si-N bonds was found, which indicated that the films remained amorphous.

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