Extremely sharp photoluminescence from InGaAs/GaAs quantum wells grown by flow-rate modulation epitaxy

被引：0
|
作者：
Sato, Michio [1 ]
Horikoshi, Yoshiji [1 ]
机构：
[1] NTT Basic Research Lab, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27卷 / 11期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Semiconductor Materials
引用
收藏
页码：2192 / 2194
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