共 50 条
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- [3] PHOTOLUMINESCENCE FROM INGAAS-GAAS STRAINED-LAYER SUPERLATTICES GROWN BY FLOW-RATE MODULATION EPITAXYAPPLIED PHYSICS LETTERS, 1988, 52 (02) : 123 - 126SATO, MHORIKOSHI, Y
- [4] PHOTOLUMINESCENCE FROM HIGHLY-FLAT-INTERFACE INAS/GAAS HETEROSTRUCTURES GROWN BY FLOW-RATE MODULATION EPITAXYJOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 936 - 936SATO, MHORIKOSHI, Y
- [5] FLOW-RATE MODULATION EPITAXY OF GAASJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (12): : L962 - L964KOBAYASHI, NMAKIMOTO, THORIKOSHI, Y
- [6] OPTIMAL-GROWTH CONDITIONS OF ALGAAS/GAAS QUANTUM WELLS BY FLOW-RATE MODULATION EPITAXYJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (02): : L155 - L158YAMAUCHI, YMAKIMOTO, THORIKOSHI, Y
- [7] INAS MONOMOLECULAR PLANE IN GAAS GROWN BY FLOW-RATE MODULATION EPITAXYJOURNAL OF APPLIED PHYSICS, 1989, 66 (02) : 851 - 855SATO, MHORIKOSHI, Y
- [8] FLOW-RATE MODULATION EPITAXY OF GaAs.Japanese Journal of Applied Physics, Part 2: Letters, 1985, 24 (12): : 962 - 964Kobayashi, NaokiMakimoto, ToshikiHorikoshi, Yoshiji
- [9] FLOW-RATE MODULATION EPITAXY OF GAAS AND ALGAASJOURNAL OF APPLIED PHYSICS, 1989, 66 (02) : 640 - 651KOBAYASHI, NMAKIMOTO, TYAMAUCHI, YHORIKOSHI, Y
- [10] IMPROVED FLATNESS IN GAAS/ALGAAS HETEROINTERFACES GROWN BY FLOW-RATE MODULATION EPITAXYAPPLIED PHYSICS LETTERS, 1987, 50 (14) : 909 - 911KOBAYASHI, NHORIKOSHI, Y