Calculating the thermal regime of a switching power CMOS-transistor with the vertical structure

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Izv VUZ Radioelektron | / 5卷 / 71-73期
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Thermal regime;
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A physical model of CMOS-transistors is used for development of the calculation scheme of their thermal regime. The studied structure and relevant equivalent circuit are given. The circuit consists of the resistance of a channel with nonlinear temperature dependence and the RC-loop replacing distributed resistances and between-electrode capacitances of the rest structure part.
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