Optimized disk structure and Ge-Tb-Sb composition for overwritable phase change compact disk

被引：0
|
作者：
Terada, Masato [1 ]
Furuya, Kazuyuki [1 ]
Okamura, Tatsuya [1 ]
Morimoto, Isao [1 ]
Nakao, Masafumi [1 ]
机构：
[1] Asahi Chemical Industry Co, Ltd, Shizuoka, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 11 B期
关键词：
Antimony - Composition effects - Germanium - Optical films - Optical recording - Structure (composition) - Terbium;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We have investigated a disk structure and recording film composition suitable for the overwritable phase change compact disk. A high performance has been achieved at low linear velocity using the rapid cooling structure and the recording film composition of Ge25Te48Sb27.
引用
收藏
页码：5219 / 5222
相关论文
共 50 条
  • [41] Influence of the Composition on the Thermoelectric and Electro-physical Properties of Ge-Sb-Te Thin Films for Phase Change Memory Application
    Lazarenko, P. I.
    Sherchenkov, A. A.
    Kozyukhin, S. A.
    Terekhov, D. Y.
    Yakubov, A. O.
    Babich, A. V.
    Shuliatyev, A. S.
    Sagunova, I. V.
    Redichev, E. N.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2016, 8 (03)
  • [42] Improvement of overwrite jitter of a phase-change optical disk with Al-alloy double-reflective-layer structure
    Hirotsune, Akemi
    Terao, Motoyasu
    Miyauchi, Yasushi
    Miyamoto, Makoto
    Tokushuku, Nobuhiro
    Tamura, Reiji
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (12): : 7749 - 7754
  • [43] Local structure effects of carbon-doping on the phase change material Ge2Sb2Te5
    Langhout, John D.
    Alverson, Danielle N.
    Ginter, Colton
    Ravel, Bruce
    Adams, David P.
    Butala, Megan M.
    JOURNAL OF MATERIALS CHEMISTRY C, 2024, 12 (22) : 7867 - 7877
  • [44] Nature of Atomic Bonding and Atomic Structure in the Phase-Change Ge2Sb2Te5 Glass
    Xu, M.
    Cheng, Y. Q.
    Sheng, H. W.
    Ma, E.
    PHYSICAL REVIEW LETTERS, 2009, 103 (19)
  • [45] Investigation on the crystallization properties and structure of oxygen-doped Ge8Sb92 phase change thin films
    Wu, Weihua
    He, Zifang
    Chen, Shiyu
    Zhai, Jiwei
    Song, Sannian
    Song, Zhitang
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (09)
  • [46] Structure and sheet resistance of boron-implanted Ge2Sb2Te5 phase change film
    Liu, B
    Song, ZT
    Feng, SL
    Chen, B
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 119 (02): : 125 - 130
  • [47] Phase Change via Intermediary Metastable Local Structure of Ge Atoms in Ge2Sb2Te5 Nanowires during Electrical Switching
    Ahn, Min
    Oh, Jin-Su
    Park, Dambi
    Jung, Hoon
    Park, Sungjin
    Jeong, Kwangsik
    Kim, Dasol
    Sung, Nark-Eon
    Lee, Kug-Seung
    Yang, Cheol-Woong
    Cho, Mann-Ho
    ACS APPLIED ELECTRONIC MATERIALS, 2020, 2 (08) : 2418 - 2428
  • [48] The micro-structure and composition evolution of Ti-Sb-Te alloy during reversible phase transition in phase change memory
    Zhu, Min
    Wu, Liangcai
    Rao, Feng
    Song, Zhitang
    Xia, Mengjia
    Ji, Xinglong
    Lv, Shilong
    Feng, Songling
    APPLIED PHYSICS LETTERS, 2014, 104 (06)
  • [49] Phase change memory cell based on Sb2Te3/TiN/Ge2Sb2Te5 sandwich-structure
    Rao, Feng
    Song, Zhitang
    Wu, Liangcai
    Gong, Yuefeng
    Feng, Songlin
    Chen, Bomy
    SOLID-STATE ELECTRONICS, 2009, 53 (03) : 276 - 278
  • [50] Exploring the subsurface atomic structure of the epitaxially grown phase-change material Ge2Sb2Te5
    Kellner, J.
    Bihlmayer, G.
    Deringer, V. L.
    Liebmann, M.
    Pauly, C.
    Giussani, A.
    Boschker, J. E.
    Calarco, R.
    Dronskowski, R.
    Morgenstern, M.
    PHYSICAL REVIEW B, 2017, 96 (24)
12345