Shock-tracking algorithm for surface evolution under reactive-ion etching

被引：0
|
作者：
机构：
来源：
| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 74期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Stability of fluorinated parylenes to oxygen reactive-ion etching under aluminum, aluminum oxide, and tantalum nitride overlayers
    Senkevich, JJ
    Wang, B
    Fortin, JB
    Nielsen, MC
    McDonald, JF
    Lu, TM
    Nuesca, GM
    Peterson, GG
    Selbrede, SC
    Weise, MT
    JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (09) : 925 - 931
  • [22] REACTIVE-ION ETCHING GOES COMMERCIAL, PROMISING TO BOOST LSI AND VLSI YIELDS
    COHEN, C
    ELECTRONICS-US, 1980, 53 (24): : 76 - +
  • [23] Nanostructure fabrication by reactive-ion etching of laser-focused chromium on silicon
    Natl Inst of Standards and, Technology, Gaithersburg, United States
    Appl Phys B, 1 (95-98):
  • [24] Nanostructure fabrication by reactive-ion etching of laser-focused chromium on silicon
    McClelland, JJ
    Gupta, R
    Celotta, RJ
    Porkolab, GA
    APPLIED PHYSICS B-LASERS AND OPTICS, 1998, 66 (01): : 95 - 98
  • [25] Features of the formation of non-vertical profiles on the surface of 4H-SiC by the reactive-ion etching
    Serkov, A. V.
    Golubkov, V. A.
    Ilyin, V. A.
    Savchenko, D. A.
    25TH INTERNATIONAL CONFERENCE ON VACUUM TECHNIQUE AND TECHNOLOGY, 2018, 387
  • [26] Nanostructure fabrication by reactive-ion etching of laser-focused chromium on silicon
    J.J. McClelland
    R. Gupta
    R.J. Celotta
    G.A. Porkolab
    Applied Physics B, 1998, 66 : 95 - 98
  • [27] REACTIVE-ION ETCHING-INDUCED DAMAGE IN MOS DEVICES FOR ULSI CIRCUITS
    MANCHANDA, L
    SCHUTZ, RJ
    VANHISE, CW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) : C119 - C119
  • [28] Dry Etching Characteristics of InGaZnO Thin Films Under Inductively Coupled Plasma–Reactive-Ion Etching with Hydrochloride and Argon Gas Mixture
    Oh, Changyong
    Ju, Myeong Woo
    Jeong, Hojun
    Song, Jun Ho
    Kim, Bo Sung
    Lee, Dae Gyu
    Cho, ChoongHo
    Materials, 2024, 17 (24)
  • [29] Analysis of sidewall quality in through-wafer deep reactive-ion etching
    Pike, WT
    Karl, WJ
    Kumar, S
    Vijendran, S
    Semple, T
    MICROELECTRONIC ENGINEERING, 2004, 73-4 : 340 - 345
  • [30] THE EFFECT OF CHAMBER CONFIGURATIONS AND BIAS VOLTAGES ON DAMAGE INDUCED IN SI BY REACTIVE-ION ETCHING
    PANG, SW
    HORWITZ, CM
    RATHMAN, DD
    CABRAL, SM
    SILVERSMITH, DJ
    MOUNTAIN, RW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C83 - C83
12345