Monte Carlo study of kink effect in short-channel InAlAs/InGaAs high electron mobility transistors

被引：0
|
作者：
机构：
[1] Vasallo, B.G.
[2] Mateos, J.
[3] Pardo, D.
[4] González, T.
来源：
Vasallo, B.G. (a50343@usal.es) | 1600年 / American Institute of Physics Inc.卷 / 94期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Ionization-induced carrier transport in InAlAs/InGaAs high electron mobility transistors
    McMorrow, D
    Knudson, AR
    Boos, JB
    Park, D
    Melinger, JS
    PROCEEDINGS OF THE 7TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 2004, 536 : 385 - 392
  • [32] Transport properties of InAlAs/InGaAs metamorphic high electron mobility transistors on GaAs substrate
    Jiang, CP
    Li, XJ
    Guo, SL
    Sun, Q
    Huang, ZM
    Chu, JH
    SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 1077 - 1080
  • [33] Dependence on channel potential structures of I-V characteristics in InAlAs/InGaAs pseudomorphic high electron mobility transistors
    Maeda, N
    Ito, H
    Enoki, T
    Ishii, Y
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (03) : 1552 - 1565
  • [34] Anomalous Kink Effect in GaN High Electron Mobility Transistors
    Meneghesso, Gaudenzio
    Zanon, Franco
    Uren, Michael J.
    Zanoni, Enrico
    IEEE ELECTRON DEVICE LETTERS, 2009, 30 (02) : 100 - 102
  • [35] Monte Carlo Study of an InAlAs/InGaAs Velocity Modulation Transistor
    Vasallo, Beatriz G.
    Gonzalez, Tomas
    Pardo, Daniel
    Mateos, Javier
    PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES, 2009, : 128 - 131
  • [36] High-performance, 0.1 mu m InAlAs/InGaAs high electron mobility transistors on GaAs
    Gill, DM
    Kane, BC
    Svensson, SP
    Tu, DW
    Uppal, PN
    Byer, NE
    IEEE ELECTRON DEVICE LETTERS, 1996, 17 (07) : 328 - 330
  • [37] High breakdown voltage InAlAs/InGaAs high electron mobility transistors on GaAs with wide recess structure
    Higuchi, K
    Matsumoto, H
    Mishima, T
    Nakamura, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2B): : 1178 - 1181
  • [38] High breakdown voltage InAlAs/InGaAs high electron mobility transistors on GaAs with wide recess structure
    Higuchi, Katsuhiko
    Matsumoto, Hidetoshi
    Mishima, Tomoyoshi
    Nakamura, Tohru
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (2 B): : 1178 - 1181
  • [39] Comprehensive Study of InAlAs/InGaAs Metamorphic High Electron Mobility Transistor with Oxidized InAlAs Gate
    Lee, Kuan-Wei
    Lin, Hsien-Chang
    Lee, Kai-Lin
    Hsieh, Chia-Hong
    Wang, Yeong-Her
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (12) : H925 - H929
  • [40] Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light
    Takanashi, Y
    Takahata, K
    Muramoto, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (12) : 2271 - 2277
12345