Improvement of hot-electron hardness in metal-oxide-semiconductor devices by combination of gate electrode deposited using amorphous Si and gate oxide grown in N2O

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Natl Tsing Hua Univ, Hsinchu, Taiwan [1 ]
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Jpn J Appl Phys Part 2 Letter | / 8 A卷 / L968-L970期
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MOS devices
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