Annealing of 'intrinsic' and photo-induced defects in hydrogenated amorphous silicon

被引：0

作者：

Parsons, G.N. ^{[1
]}

Wang, C. ^{[1
]}

Lucovsky, G. ^{[1
]}

机构：

[1] North Carolina State Univ, Raleigh, United States

来源：

Thin Solid Films | 1990年 / 194卷 / 1 -2 pt 2期

关键词：

Semiconducting Silicon;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：577 / 587

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