Low-temperature crystallization of sol-gel-derived Pb(Zr,Ti)O3 thin films

被引：0
|
作者：
Fujimori, Yoshikazu [1 ]
Nakamura, Takashi [1 ]
Takasu, Hidemi [1 ]
机构：
[1] Device Technology Div., Semiconductor R and D Headquarters, ROHM Co., Ltd., 21, Saiin Mizosaki-chom, Ukyo-ku, Kyoto 615-8585, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 9 B期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：5346 / 5349
相关论文
共 50 条
  • [1] Low-temperature crystallization of sol-gel-derived Pb(Zr, Ti)O3 thin films
    Fujimori, Y
    Nakamura, T
    Takasu, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9B): : 5346 - 5349
  • [2] Lowering of crystallization temperature of sol-gel derived Pb(Zr,Ti)O3 thin films
    Maki, K
    Soyama, N
    Mori, S
    Ogi, K
    INTEGRATED FERROELECTRICS, 2000, 30 (1-4) : 193 - 202
  • [3] Low-temperature crystallization of sol-gel derived Pb(Zr0.4,Ti0.6)O3 thin films
    Maki, K
    Soyama, N
    Nagamine, K
    Mori, S
    Ogi, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (9B): : 5533 - 5538
  • [4] Low-temperature crystallization of sol-gel derived Pb(Zr0.4,Ti0.6)O3 thin films
    Maki, Kazunari
    Soyama, Nobuyuki
    Nagamine, Kaoru
    Mori, Satoru
    Ogi, Katsumi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (9 B): : 5533 - 5538
  • [5] Effects of ultrasound on crystallization behavior and ferroelectric properties of sol-gel-derived Pb(Zr, Ti)O3 thin films
    Lee, JH
    Kim, NK
    Park, BO
    JOURNAL OF CRYSTAL GROWTH, 2003, 249 (3-4) : 531 - 537
  • [6] Effect of substrate on crystallization of sol-gel-derived Pb(Zr0.52Ti0.48)O3 thin films by microwave annealing
    Wang, Zhanjie
    Chen, Yanna
    ADVANCED MATERIALS SCIENCE AND TECHNOLOGY, (IFAMST-8), 2013, 750 : 212 - 215
  • [7] Sol-gel derived Pb(Zr,Ti)O3 thin films on GaAs
    Arscott, S
    Smith, N
    Kurchania, R
    Milne, SJ
    Miles, RE
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (02) : 244 - 248
  • [8] Electric fatigue properties of sol-gel-derived Pb(Zr, Ti)O3/PbZrO3 multilayered thin films
    Jang, JH
    Yoon, KH
    APPLIED PHYSICS LETTERS, 1999, 75 (01) : 130 - 132
  • [9] The low-volatage-switching behavior of sol-gel-derived Pb(Zr,Ti)O3 thin film capacitors
    Kim, SH
    Park, DY
    Woo, HJ
    Lee, DS
    Ha, JW
    Hwang, CS
    Jeong, S
    Kingon, AI
    INTEGRATED FERROELECTRICS, 2001, 39 (1-4) : 963 - 972
  • [10] Fatigue characteristics of sol-gel derived Pb(Zr, Ti)O3 thin films
    Amanuma, Kazushi
    Hase, Takashi
    Miyasaka, Yoichi
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1994, 33 (9 B): : 5211 - 5214
12345