HISTORICAL PERSPECTIVES ON ION IMPLANTATION.

被引：0
|
作者：
Gibbons, James F. [1 ]
机构：
[1] Stanford Univ, Stanford, CA, USA, Stanford Univ, Stanford, CA, USA
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1986年 / B21卷 / 2-4期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
MATERIALS
引用
收藏
页码：83 / 89
相关论文
共 50 条
  • [21] Improved MOS Technology Using Ion Implantation.
    Bernard, J.
    Onde Electrique, 1974, 54 (01): : 15 - 22
  • [22] MEVVA ION SOURCE FOR HIGH CURRENT METAL ION IMPLANTATION.
    Brown, Ian
    Washburn, Jack
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B21 (2-4) : 201 - 204
  • [23] PROPERTIES OF NICKEL MODIFIED BY SILVER ION IMPLANTATION.
    Tashlykov, I.S.
    Slesarenko, P.A.
    Komarov, F.F.
    Physics and chemistry of materials treatment, 1986, 20 (06): : 487 - 490
  • [24] ALIGNMENT ACCURACY OF FOCUSED ION BEAM IMPLANTATION.
    Morita, Tetsuo
    Arimoto, Hiroshi
    Miyauchi, Eizo
    Hashimoto, Hisao
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (06): : 955 - 958
  • [25] Modification of polymeric surfaces with plasma and ion implantation.
    Lee, YH
    Han, SH
    Lim, HN
    Suh, MJ
    Nah, YH
    Kim, JS
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2000, 219 : U387 - U387
  • [26] ON AMORPHOUS LAYER FORMATION IN SILICON BY ION IMPLANTATION.
    Bourgoin, J.C.
    Morhange, J.F.
    Beserman, R.
    Radiation Effects, 1974, 22 (03): : 205 - 208
  • [27] FORMATION OF AlN BY NITROGEN MOLECULE ION IMPLANTATION.
    Ohira, Shigeo
    Iwaki, Masaya
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B19-20 : 162 - 166
  • [28] SILICON SOLAR CELL FABRICATED BY ION IMPLANTATION.
    Tokiguchi, Katsumi
    Itoh, Haruo
    Saitoh, Tadashi
    Japan Annual Reviews in Electronics, Computers & Telecommunications, 1984, 13 : 235 - 247
  • [29] MODELING THE PROFILE OF THE DEPTH DISTRIBUTION OF IMPURITIES IN ION IMPLANTATION.
    Kadmenskii, A.G.
    Faizrakhmanov, V.R.
    Optoelectronics, Instrumentation and Data Processing (English translation of Avtometriya), 1986, (05): : 67 - 72
  • [30] Optical property changes of sapphire induced by ion implantation.
    Ikeyama, M
    Tazawa, M
    Morikawa, H
    Chayahara, A
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 1077 - 1080
12345