Technique for measuring residual stress in SiC whiskers within an alumina matrix through Raman spectroscopy

被引:0
|
作者
机构
来源
| 1600年 / 71期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] A TECHNIQUE FOR MEASURING RESIDUAL-STRESS IN SIC WHISKERS WITHIN AN ALUMINA MATRIX THROUGH RAMAN-SPECTROSCOPY
    DIGREGORIO, JF
    FURTAK, TE
    PETROVIC, JJ
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (07) : 3524 - 3531
  • [2] Microstructure and thermal residual stress analysis of SiC fiber through Raman spectroscopy
    Xiao, Zhiyuan
    Yang, Yanqing
    Jin, Na
    Liu, Shuai
    Luo, Xian
    Huang, Bin
    JOURNAL OF RAMAN SPECTROSCOPY, 2013, 44 (09) : 1306 - 1311
  • [3] Residual stress measurements in melt infiltrated SiC/SiC ceramic matrix composites using Raman spectroscopy
    Kollins, Kaitlin
    Przybyla, Craig
    Amer, Maher S.
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2018, 38 (07) : 2784 - 2791
  • [4] ANALYSIS OF RESIDUAL-STRESS IN 6H-SIC PARTICLES WITHIN AL2O3/SIC COMPOSITES THROUGH RAMAN-SPECTROSCOPY
    DIGREGORIO, JF
    FURTAK, TE
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1992, 75 (07) : 1854 - 1857
  • [5] Measuring the effects of heat treatment on SiC/SiC ceramic matrix composites using Raman spectroscopy
    Knauf, Michael W.
    Przybyla, Craig P.
    Ritchey, Andrew J.
    Trice, Rodney W.
    Pipes, R. Byron
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2020, 103 (02) : 1293 - 1303
  • [6] Measurement of scratch-induced residual stress within SIC grains in ZrB2-SiC composite using micro-Raman spectroscopy
    Ghosh, Dipankar
    Subhash, Ghatu
    Orlovskaya, Nina
    ACTA MATERIALIA, 2008, 56 (18) : 5345 - 5354
  • [7] A thermomechanical technique for measuring residual stress
    Rajic, N
    Wong, AK
    Lam, YC
    EXPERIMENTAL TECHNIQUES, 1996, 20 (02) : 25 - 27
  • [8] Thermomechanical technique for measuring residual stress
    Monash Univ, Clayton
    Exp Tech, 2 (25-27):
  • [9] CHARACTERIZATION OF SIC WHISKERS THROUGH INFRARED-ABSORPTION SPECTROSCOPY
    DIGREGORIO, JF
    FURTAK, TE
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) : 8506 - 8513
  • [10] Technique for measuring the residual strain in strained Si/SiGe MOSFET structures using Raman spectroscopy
    Dobrosz, P
    Bull, SJ
    Olsen, SH
    O'Neill, AG
    ZEITSCHRIFT FUR METALLKUNDE, 2004, 95 (05): : 340 - 344