Achieving high current gain and low emitter resistance with the SiCx:F widegap emitter

被引：0
|
作者：
Sugii, Toshihiro [1 ]
Yamazaki, Tatsuya [1 ]
Ito, Takashi [1 ]
机构：
[1] Fujitsu Lab Ltd, Kanagawa, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1991年 / 30卷 / 6 A期
关键词：
Electric Conductivity - Fluorine;
D O I：
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中图分类号：
学科分类号：
摘要：
We investigated the relationship between current gain and emitter resistance of the heterojunction bipolar transistor using an SiCx terminated by fluorine atoms (SiCx:F) widegap emitter and achieved high current gain and low emitter resistance. The emitter resistance of about 40 Ω&middotμm2 and no relationship between current gain and emitter resistance indicate the absence of the interfacial oxide effect on the electrical characteristics. The compatibility of high current gain and low emitter resistance will lead to higher cut-off frequency due to decreased emitter charge storage.
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页码：970 / 972
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