ACHIEVING HIGH-CURRENT GAIN AND LOW EMITTER RESISTANCE WITH THE SICX-F WIDEGAP EMITTER

被引：2
|
作者：
SUGII, T
YAMAZAKI, T
ITO, T
机构：
[1] Fujitsu Laboratories Ltd, Atsugi Kanagawa, 243-01
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 6A期
关键词：
SICX; SICX-F; WIDEGAP EMITTER; FLUORINE; EMITTER RESISTANCE; HBT; HETEROJUNCTION BIPOLAR TRANSISTOR;
D O I：
10.1143/JJAP.30.L970
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the relationship between current gain and emitter resistance of the heterojunction bipolar transistor using an SiC(x) terminated by fluorine atoms (SiC(x):F) widegap emitter and achieved high current gain and low emitter resistance. The emitter resistance of about 40 OMEGA.-mu-m2 and no relationship between current gain and emitter resistance indicate the absence of the interfacial oxide effect on the electrical characteristics. The compatibility of high current gain and low emitter resistance will lead to higher cut-off frequency due to decreased emitter charge storage.
引用
收藏
页码：L970 / L972
页数：3
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