CALCULATION OF THE BARRIER CAPACITANCE OF A DIFFUSED p-n JUNCTION WITH DEEP IMPURITIES.

被引：0

|

作者：

Berman, L.S.

机构：

来源：

| 1991年 / 06期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

SEMICONDUCTOR DEVICES

引用

收藏

相关论文

共 50 条

[21] ANOMALOUS BARRIER CAPACITANCE IN P-N JUNCTIONS OF INSB
LEE, CA
KAMINSKY, G
JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1717 - 1719
[22] INFLUENCE OF INCOMPLETE IONIZATION OF IMPURITIES ON CAPACITANCE OF P-N JUNCTIONS
NUYTS, W
VANOVERS.R
JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) : 3988 - &
[23] ADMITTANCE CHARACTERISTICS OF A P-N JUNCTION DIODE WITH NARROW DIFFUSED REGION
BHATTACHARYYA, AB
GANGADHAR, RB
SOLID-STATE ELECTRONICS, 1971, 14 (11) : 1113 - +
[24] VISIBLE LIGHT EMISSION FROM GERMANIUM DIFFUSED P-N JUNCTION
KIKUCHI, M
TACHIKAWA, K
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1959, 14 (12) : 1830 - 1830
[25] ON TRANSIENTS IN NONLINEAR CIRCUITS CONTAINING CAPACITANCE OF A P-N JUNCTION
MOLCHANO.AA
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1965, 10 (08): : 1268 - &
[26] TRANSIENTS IN SIMPLE RC CIRCUITS WITH CAPACITANCE OF A P-N JUNCTION
SHAGIMUR.GI
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1969, 14 (04): : 617 - &
[27] EVALUATION OF EFFECT OF MOBILE CARRIERS ON P-N JUNCTION CAPACITANCE
ALMAZOV, AB
KULIKOVA, YV
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1970, (04): : 737 - &
[28] CAPACITANCE-VOLTAGE RELATIONS OF SCHOTTKY AND P-N DIODES IN PRESENCE OF BOTH SHALLOW AND DEEP IMPURITIES
VANOPDORP, C
PHYSICA STATUS SOLIDI, 1969, 32 (01): : 81 - +
[29] BARRIER CAPACITANCE OF DIFFUSED P-N-JUNCTIONS IN GALLIUM-ARSENIDE
MASHNIN, SV
KHLUDKOV, SS
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1971, 16 (07): : 1171 - +
[30] A quantum-mechanical view on the capacitance of a silicon p-n junction
NXP Semiconductors, 3001 Leuven, Belgium
IEEE Electron Device Lett, 2007, 4 (312-314):

← 1 2 3 4 5 →