Low operating current and high-temperature operation of 650-nm AlGaInP high-power laser diodes with real refractive index guided self-aligned structure

被引：0
|
作者：
Imafuji, Osamu [1 ,2 ,3 ,4 ]
Fukuhisa, Toshiya [1 ]
Yuri, Masaaki [1 ]
Mannoh, Masaya [1 ]
Yoshikawa, Akio [1 ]
Itoh, Kunio [1 ]
机构：
[1] Semiconductor Device Research Center, Semi-conductor Company, Matsushita Electronics Corporation, Takatsuki, Osaka 569-1193, Japan
[2] Kyoto University, Kyoto, Japan
[3] Electronics Research Laboratory, Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
[4] Semiconductor Device Research Center, Semiconductor Company, Matsushita Electronics Corp. T., Osaka, Japan
来源：
IEEE Journal on Selected Topics in Quantum Electronics | / 5卷 / 03期
关键词：
Carrier concentration - Electric currents - High power lasers - High temperature operations - Laser modes - Refractive index - Semiconducting aluminum compounds - Temperature - Waveguides - Waves;
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摘要：
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页码：721 / 728
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