Electron-optical-phonon corrections in the conduction band of wurtzite InxGa1-xN

被引:0
|
作者
Mora-Ramos, M.E. [1 ]
机构
[1] Facultad de Ciencias, Univ. Autonoma del Estado de Morelos, Ave. Universidad 1001, C.P. 62210, Cuernavaca, Morelos, Mexico
来源
| 2000年 / Wiley-VCH Verlag卷 / 219期
关键词
D O I
10.1002/1521-3951(200006)219:23.0.co;2-m
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Optical Studies on InxGa1-xN quantum disks
    Holmes, Mark J.
    Park, Young S.
    Wang, Xu
    Chan, Christopher C. S.
    Jarjour, Anas F.
    Luo, Jun
    Warner, Jamie H.
    El-Ella, H. A. R.
    Oliver, R. A.
    Taylor, Robert A.
    ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS XV, 2011, 7937
  • [22] A Theoretical Approach for the Dislocation Reduction of Wurtzite InxGa1-xN/GaN Heteroepitaxy
    Dev, Durjoy
    Islam, Anisul
    Islam, Md. Rafiqul
    Hossaini, Md. Arafat
    Yamamoto, A.
    2012 7TH INTERNATIONAL CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (ICECE), 2012,
  • [23] Properties of optical phonons in cubic InxGa1-xN
    Torii, K
    Usukura, N
    Nakamura, A
    Sota, T
    Chichibu, SF
    Kitamura, T
    Okumura, H
    APPLIED PHYSICS LETTERS, 2003, 82 (01) : 52 - 54
  • [24] First-principles calculation for bowing parameter of wurtzite InxGa1-xN
    Liou, BT
    Lin, CY
    Yen, SH
    Kuo, YK
    OPTICS COMMUNICATIONS, 2005, 249 (1-3) : 217 - 223
  • [25] First-Principles Investigation on Electronic Structure and Optical Properties of Wurtzite InxGa1-xN Alloys
    Ruan Xingxiang
    Zhang Fuchun
    Zhang Weihu
    RARE METAL MATERIALS AND ENGINEERING, 2015, 44 (12) : 3027 - 3031
  • [26] THE EFFECT COMPOSITION DEPENDENCE OF SURFACE PHONON POLARITON MODE IN WURTZITE InxGa1-xN (0 ≤ x ≤ 1) TERNARY ALLOY
    Aljameel, A. I.
    Abu Hassan, H.
    DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 2015, 10 (02) : 489 - 495
  • [27] A novel numerical approach for the calculation of refractive index of Wurtzite InxGa1-xN
    Chettri, Dhanu
    Singh, Khomdram Jolson
    Mathew, Manish
    Gupta, Nikhil Deep
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2018, 32 (28):
  • [28] Electronic band structure of InxGa1-xN under pressure
    Gorczyca, I.
    Christensen, N. E.
    Svane, A.
    Laaksonenc, K.
    Nieminen, R. M.
    ACTA PHYSICA POLONICA A, 2007, 112 (02) : 203 - 208
  • [29] Band gap of InxGa1-xN: A first principles analysis
    Cesar, Mathieu
    Ke, Youqi
    Ji, Wei
    Guo, Hong
    Mi, Zetian
    APPLIED PHYSICS LETTERS, 2011, 98 (20)
  • [30] Large band gap bowing of InxGa1-xN alloys
    McCluskey, MD
    Van de Walle, CG
    Master, CP
    Romano, LT
    Johnson, NM
    APPLIED PHYSICS LETTERS, 1998, 72 (21) : 2725 - 2726