Contactless method for electrical characterization of silicon-on-insulator materials

被引:0
|
作者
Okumura, T. [1 ]
Eguchi, K. [1 ]
En, A. [1 ]
Suhara, M. [1 ]
机构
[1] Department of Electrical Engineering, Tokyo Metropolitan University, Minami-ohsawa, Hachioji, Tokyo 192-0397, Japan
关键词
Contactless characterization - Kelvin-probe method - Surface photovoltage measurement;
D O I
10.1143/jjap.40.5217
中图分类号
学科分类号
摘要
引用
收藏
页码:5217 / 5220
相关论文
共 50 条
  • [41] Cheaper electrical power on the way via silicon-on-insulator electronics
    Ajluni, C
    ELECTRONIC DESIGN, 1998, 46 (18) : 21 - 21
  • [42] Frontiers of silicon-on-insulator
    Celler, GK
    Cristoloveanu, S
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) : 4955 - 4978
  • [43] SILICON-ON-INSULATOR TECHNOLOGY
    PARTRIDGE, SL
    IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1986, 133 (03): : 66 - 76
  • [44] Silicon-on-insulator technology
    Colinge, JP
    Bower, RW
    MRS BULLETIN, 1998, 23 (12) : 13 - 15
  • [45] Spectroscopic ellipsometry characterization of ultrathin silicon-on-insulator films
    Price, J.
    Diebold, A. C.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (04): : 2156 - 2159
  • [46] MICROSTRUCTURAL CHARACTERIZATION OF NITROGEN-IMPLANTED SILICON-ON-INSULATOR
    CHANG, PH
    SLAWINSKI, C
    MAO, BY
    LAM, HW
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) : 166 - 174
  • [47] Characterization of GaN layers grown on silicon-on-insulator substrates
    Tripathy, S.
    Wang, L. S.
    Chua, S. J.
    APPLIED SURFACE SCIENCE, 2006, 253 (01) : 236 - 240
  • [48] SILICON-ON-INSULATOR TECHNOLOGY
    CHEN, CE
    HARD, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C456 - C456
  • [49] Silicon-on-insulator breakthrough
    Erickson, J
    DR DOBBS JOURNAL, 1998, 23 (10): : 16 - 16
  • [50] SPECTROELLIPSOMETRY CHARACTERIZATION OF DIRECTLY BONDED SILICON-ON-INSULATOR STRUCTURES
    ELGHAZZAWI, ME
    SAITOH, T
    HORI, N
    SAKAI, A
    OKA, T
    THIN SOLID FILMS, 1993, 233 (1-2) : 218 - 222