Indium surface segregation in strained GaInAs quantum wells grown on (1¯ 1¯ 1¯) GaAs substrates by MBE

被引：0
|
作者：
Marcadet, X. [1 ]
Fily, A. [1 ]
Collin, S. [1 ]
Landesman, J.P. [1 ]
Larive, M. [1 ]
Olivier, J. [1 ]
Nagle, J. [1 ]
机构：
[1] Thomson-CSF/LCR, Domaine de Corbeville, 91404, Orsay, France
来源：
Journal of Crystal Growth | 1999年 / 201卷
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页码：284 / 289
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