ELECTRON MOBILITY IN Ge, Si, and GaP.

被引：0
|
作者：
Rode, D.L.
机构：
来源：
| 1600年 / 53期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Theoretical calculatins of electron mobility in the indirect crystals, Ge, Si, and GaP are presented. The model assumes parabolic and spherical conduction band minima and includes piezoelectric, acoustic, polar, Coulomb, and invervalley scattering with appropriate electron-phonon selection rules in all cases. Fermi statistics are accounted for and no further approximations are made, since drift mobility is calculated form an exact iterated solution.
引用
收藏
相关论文
共 50 条
  • [31] Evacuable Spark gap.
    Leiss, Carl
    ZEITSCHRIFT FUR PHYSIK, 1928, 52 (9-10): : 750 - 751
  • [32] Eisenhower and the missile gap.
    Bose, M
    AMERICAN POLITICAL SCIENCE REVIEW, 1998, 92 (01) : 266 - 267
  • [33] GRAFOIL STOPS THE GAP.
    Anon
    Industrial Lubrication and Tribology, 1978, 30 (01) : 12 - 13
  • [34] Investigation of the electron mobility in strained Si1-xGex at high Ge composition
    Smirnov, S
    Kosina, H
    Selberherr, S
    IEICE TRANSACTIONS ON ELECTRONICS, 2003, E86C (03): : 350 - 356
  • [35] Investigation of the electron mobility in strained Si1-xGex at high Ge composition
    Institute for Microelectronics, TU Vienna, Gusshausstrasse 27-29, Vienna
    A-1040, Austria
    Int Conf Simul Semicond Process Dev Proc SISPAD, 2002, (29-32):
  • [36] QUANTIZED HALL-EFFECTS IN HIGH-ELECTRON-MOBILITY SI/GE STRUCTURES
    MONROE, D
    XIE, YH
    FITZGERALD, EA
    SILVERMAN, PJ
    PHYSICAL REVIEW B, 1992, 46 (12): : 7935 - 7937
  • [37] Investigation of the electron mobility in strained Si1-xGex at high Ge composition
    Smirnov, S
    Kosina, H
    Selberherr, S
    SISPAD 2002: INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2002, : 29 - 32
  • [38] INTERACTION OF AN ELECTRON BEAM WITH A MICROWAVE-FREQUENCY FIELD OF A PLANAR GAP.
    Malykhin, A.V.
    Petrov, D.M.
    Radio engineering & electronic physics, 1979, 24 (05): : 80 - 86
  • [39] High mobility electron gases in Si/Si0.77Ge0.23 quantum wells at 1.7 K
    Crow, GC
    Abram, RA
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (08) : 721 - 726
  • [40] PARATRANSIT PROSPECTS - FILLING A GAP.
    Keith, R.A.
    Skinner, R.E.
    High Speed Ground Transportation Journal, 1977, 11 (03): : 245 - 259
12345