Rotation grinding of silicon-wafers

The production of silicon wafers starts by zone or crucible pulling of the monocrystalline silicon ingot which is then cut into single wafers of 0.7 mm thickness. As the wafers still have crystal and geometric defects, a following finish-machining is necessary. The traditional method of lapping for finish-machining is replaced by flat grinding, especially by a rotation grinding method, whose kinematics offer several advantages. Rotation grinding assures a constant contact length between wafer and grinding wheel. Therefore, the grinding forces, which have direct influence on crystal defects induced by matching, are constant. In order to quantify the machined wafers, geometrical, physical and chemical aspects have to be regarded.