CONTACT-LIMITED BEHAVIOR IN AMORPHOUS-SILICON FET FOR APPLICATIONS TO MATRIX-ADDRESSED LIQUID-CRYSTAL DISPLAYS.

被引：0
|
作者：
Possin, G.E. [1 ]
Castleberry, D.E. [1 ]
Piper, W.W. [1 ]
Parks, H.G. [1 ]
机构：
[1] GE, Schenectady, NY, USA, GE, Schenectady, NY, USA
来源：
Proceedings of the SID | 1984年 / 26卷 / 03期
关键词：
AMORPHOUS-SILICON PROCESS - CONTACT DROP - FERMI LEVEL - MATRIX ADDRESSING - PARASITIC CAPACITANCE;
D O I：
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页码：183 / 189
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