FORMATION MECHANISMS OF LABORATORY DOUBLE LAYERS IN TRIPLE PLASMA DEVICES.

被引：0
|
作者：
Chan, Chung [1 ]
机构：
[1] Northeastern Univ, Boston, MA, USA, Northeastern Univ, Boston, MA, USA
来源：
| 1600年 / 05期
基金：
美国国家科学基金会;
关键词：
COLLISIONLESS ION TRAPPING - DOUBLE LAYERS - ELECTRON INJECTION BOUNDARY - ION PHASE-SPACE VORTICES - VIRTUAL CATHODE TYPE POTENTIAL WELLS;
D O I：
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