Time-resolved photoluminescence and capacitance-voltage analysis of the neutral vacancy defect in silicon implanted SiO2 on silicon substrate

被引：0
|
作者：
Lin, Gong-Ru [1 ]
Lin, Chun-Jung [1 ]
Yu, Kuo-Chen [1 ]
机构：
[1] Inst. of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan
来源：
Journal of Applied Physics | 2004年 / 96卷 / 05期
关键词：
Number:; NSC92-2215-E-009-028; Acronym:; NSC; Sponsor: National Science Council;
D O I：
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学科分类号：
摘要：
(Edited Abstract)
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页码：3025 / 3027
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