Theoretical analysis of the threshold current density in GaN/AlGaN strained quantum well lasers with a modulation-doped structure

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作者：
Niwa, Atsuko [1 ]
Ohtoshi, Tsukuru [1 ]
Kuroda, Takao [1 ]
机构：
[1] Hitachi Ltd, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1997年 / 36卷 / 06期
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