Theoretical analysis of the threshold current density in GaN/AlGaN strained quantum well lasers with a modulation-doped structure

被引：0

作者：

Niwa, Atsuko ^{[1
]}

Ohtoshi, Tsukuru ^{[1
]}

Kuroda, Takao ^{[1
]}

机构：

[1] Hitachi Ltd, Tokyo, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1997年 / 36卷 / 06期

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