Strain energy density of cubic epitaxial layers

被引：0
|
作者：
Electrotechnical Lab, Ibaraki-ken, Japan [1 ]
机构：
来源：
J Cryst Growth | / 3-4卷 / 406-412期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Optical investigations and strain effect in AlGaN/GaN epitaxial layers
    Jayasakthi, M.
    Juillaguet, S.
    Peyre, H.
    Konczewicz, L.
    Moret, M.
    Briot, O.
    Baskar, K.
    Contreras, S.
    33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, 864
  • [32] STRAIN EVALUATION IN III-V COMPOUND EPITAXIAL LAYERS
    BANGERT, U
    CHARSLEY, P
    FAUX, DA
    HARVEY, JA
    SUPERLATTICES AND MICROSTRUCTURES, 1991, 9 (01) : 91 - 94
  • [33] Strain effects on exciton resonance energies of ZnO epitaxial layers
    Makino, T
    Yasuda, T
    Segawa, Y
    Ohtomo, A
    Tamura, K
    Kawasaki, M
    Koinuma, H
    APPLIED PHYSICS LETTERS, 2001, 79 (09) : 1282 - 1284
  • [34] An anisotropic elasticity model of strain partitioning in epitaxial thin layers
    Wakeland, P
    Khraishi, T
    Zubia, D
    JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (08) : 836 - 841
  • [35] Strain effect on interatomic distances in InGaAs/InP epitaxial layers
    Tormen, M
    De Salvador, D
    Boscherini, F
    Romanato, F
    Drigo, AV
    Mobilio, S
    APPLIED SURFACE SCIENCE, 2002, 188 (1-2) : 85 - 89
  • [36] Anisotropic strain relaxation of GaInP epitaxial layers in compression and tension
    Matragrano, MJ
    Shealy, JR
    Krishnamoorthy, V
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) : 8371 - 8378
  • [37] Influence of surface strain on the MOVPE growth of InGaP epitaxial layers
    Novak, J.
    Hasenhoehrl, S.
    Vavra, I.
    Kucera, M.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2007, 87 (03): : 511 - 516
  • [38] Theoretical study of strain-induced ordering in cubic InxGa1-xN epitaxial layers -: art. no. 245317
    Teles, LK
    Ferreira, LG
    Scolfaro, LMR
    Leite, JR
    PHYSICAL REVIEW B, 2004, 69 (24) : 245317 - 1
  • [39] Structural properties of cubic GaN epitaxial layers grown on beta-SiC
    Teles, LK
    Scolfaro, LMR
    Enderlein, R
    Leite, JR
    Josiek, A
    Schikora, D
    Lischka, K
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (11) : 6322 - 6328
  • [40] The residual donor binding energy in AlGaN epitaxial layers
    Steude, G
    Hofmann, DM
    Meyer, BK
    Amano, H
    Akasaki, I
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1998, 165 (02): : R3 - R4
12345