Structural defects of cubic InGaN/GaN heterostructure grown on GaAs(001) substrate by MOVPE

被引：0
|
作者：
Dept. of Electronics and Mech. Eng., Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan [1 ]
不详 [2 ]
机构：
来源：
Phys Status Solidi A | / 1卷 / 397-400期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE
    Laifi, J.
    Chaaben, N.
    Bouazizi, H.
    Fourati, N.
    Zerrouki, C.
    El Gmili, Y.
    Bchetnia, A.
    Salvestrini, J. P.
    El Jani, B.
    SUPERLATTICES AND MICROSTRUCTURES, 2016, 94 : 30 - 38
  • [22] Optical properties of carbon doped cubic GaN epilayers grown on GaAs(001) substrate by molecular beam epitaxy
    As, DJ
    Köhler, U
    Lischka, K
    GAN AND RELATED ALLOYS-2001, 2002, 693 : 17 - 22
  • [23] Growth and morphology of MOVPE grown InGaN/GaN islands
    Gangopadhyay, S.
    Schmidt, Th.
    Einfeldt, S.
    Yamaguchi, T.
    Hommel, D.
    Falta, J.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 1557 - 1560
  • [24] Structural and optical characterization of GaN grown on porous silicon substrate by MOVPE
    Chaaben, N
    Boufaden, T
    Christophersen, M
    El Jani, B
    MICROELECTRONICS JOURNAL, 2004, 35 (11) : 891 - 895
  • [25] Growth of cubic GaN on (001)GaAS
    Brandt, O
    Yang, H
    Trampert, A
    Ploog, KH
    GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 27 - 37
  • [26] Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates
    Noriega, OC
    Tabata, A
    Soares, JANT
    Rodrigues, SCP
    Leite, JR
    Ribeiro, E
    Fernandez, JRL
    Meneses, EA
    Cerdeira, F
    As, DJ
    Schikora, D
    Lischka, K
    JOURNAL OF CRYSTAL GROWTH, 2003, 252 (1-3) : 208 - 212
  • [27] The Energy State of Epitaxial Layers in a Multilayer Heterostructure, Grown on a (001)GaAs Substrate
    Aleshin, A. N.
    Bugaev, A. S.
    Ruban, O. A.
    Saraikin, V. V.
    Tabachkova, N. Yu
    Shchetinin, I., V
    CRYSTALLOGRAPHY REPORTS, 2020, 65 (01) : 138 - 146
  • [28] The Energy State of Epitaxial Layers in a Multilayer Heterostructure, Grown on a (001)GaAs Substrate
    A. N. Aleshin
    A. S. Bugaev
    O. A. Ruban
    V. V. Saraikin
    N. Yu. Tabachkova
    I. V. Shchetinin
    Crystallography Reports, 2020, 65 : 138 - 146
  • [29] Cleaved cavity stimulated emission from an optically pumped cubic GaN/AlGaN heterostructure grown on GaAs (100) substrate
    Wu, J
    Yaguchi, H
    Onabe, K
    Shiraki, Y
    APPLIED PHYSICS LETTERS, 1998, 73 (14) : 1931 - 1933
  • [30] Structural properties of undoped and doped cubic GaN grown on SiC(001)
    Martinez-Guerrero, E
    Bellet-Amalric, E
    Martinet, L
    Feuillet, G
    Daudin, B
    Mariette, H
    Holliger, P
    Dubois, C
    Bru-Chevallier, C
    Nze, PA
    Chassagne, T
    Ferro, G
    Monteil, Y
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (08) : 4983 - 4987
12345