Electrical properties of amorphous Si-P/p-type Si Schottky barrier contact

被引:0
|
作者
机构
[1] Ogino, Toshio
来源
Ogino, Toshio | 1600年 / 30期
关键词
Semiconducting Silicon;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Impact of ammonia on the electrical properties of p-type Si nanowire arrays
    1600, American Institute of Physics Inc. (114):
  • [22] Silicon-germanium-boron amorphous alloy on p-type Si as infrared Schottky detector
    Gomez, JGS
    Jacome, AT
    ICCDCS 98: PROCEEDINGS OF THE 1998 SECOND IEEE INTERNATIONAL CARACAS CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS, 1998, : 75 - 78
  • [23] Temperature dependence of a CrSi2 Schottky barrier on n-type and p-type Si
    Aniltürk, ÖS
    Turan, R
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (12) : 1060 - 1064
  • [24] Comparison of electrical parameters of Zn/p-Si and Sn/p-Si Schottky barrier diodes
    Karatas, S
    SOLID STATE COMMUNICATIONS, 2005, 135 (08) : 500 - 504
  • [25] The Electrical Properties of Au/P3HT/n-Type Si Schottky Barrier Diode
    Asimov, A.
    Ahmetoglu, M.
    Kirsoy, A.
    Ozer, M.
    Yasin, M.
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2016, 11 (02) : 214 - 218
  • [26] COMPENSATION EFFECT OF ELECTRICAL TRANSPORT AND THERMAL-PROPERTIES IN SI-P
    NISHIO, Y
    KAJITA, K
    IWATA, T
    SASAKI, W
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 : 691 - 692
  • [27] ELECTRICAL-PROPERTIES OF P-TYPE GAP SCHOTTKY-BARRIER UNDER STRESS
    KUSAKA, M
    HIRAOKA, N
    HIRAI, M
    OKAZAKI, S
    SURFACE SCIENCE, 1980, 91 (01) : 264 - 270
  • [28] OPTICAL AND ELECTRICAL INVESTIGATION OF SEMICONDUCTING AMORPHOUS SI-P ALLOY THIN-FILMS
    LI, XH
    CARLSSON, JRA
    GONG, SF
    HENTZELL, HTG
    LIEDBERG, B
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (01) : 301 - 307
  • [29] Electrical activity of deep traps in p-type Si
    Kaniewska, A
    Lal, A
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 72 (1-4) : 509 - 515
  • [30] Impact of annealing process on electrical characteristics of Ni Schottky rectifiers fabricated on p-type Si
    Manjunath, V.
    Reddy, N. Nanda Kumar
    Veni, K. Krishna
    Suvarna, R. Padma
    Ananda, P.
    Lakshmaiah, M. V.
    JOURNAL OF THE INDIAN CHEMICAL SOCIETY, 2019, 96 (01) : 85 - 89