Molecular beam epitaxial growth of ZnSe(111) films on GaAs(111)B substrates and nitrogen doping

被引：0

作者：

Matsumura, N. ^{[1
]}

Matsuoka, T. ^{[1
]}

Shimakawa, H. ^{[1
]}

Saraie, J. ^{[1
]}

机构：

[1] Kyoto Inst of Technology, Kyoto, Japan

来源：

Journal of Crystal Growth | 1997年 / 175-176卷 / pt 1期

关键词：

Crystal defects - Crystal orientation - Film growth - Molecular beam epitaxy - Nitrogen - Photoluminescence - Plasma applications - Reflection high energy electron diffraction - Semiconducting gallium arsenide - Semiconductor doping - Semiconductor growth - Substrates;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

ZnSe films were grown on GaAs(1 1 1)B substrates by molecular beam epitaxy. The observation of reflection high-energy electron diffraction confirmed that the epilayers on both just and 10°-misoriented (1 1 1)B substrates consist of twins. The photoluminescence of the undoped epilayers showed defect-related Y-line emissions and deep emissions owing to the twins. Nitrogen was doped to the epilayers using an RF plasma cell. The photoluminescence spectra of the doped epilayers suggested that the nitrogen doping to ZnSe is enhanced using the GaAs(1 1 1)B substrates instead of the GaAs(1 0 0) substrates. We discussed the reason based on the bond number of the growing surface.

引用

页码：608 / 612

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