Current voltage characteristics of p-p isotype InGaAlP/GaAs heterojunction with a large valence-band discontinuity

被引：0
|
作者：
Itaya, Kazuhiko [1 ]
Ishikawa, Masayuki [1 ]
Hatakoshi, Gen-ichi [1 ]
机构：
[1] Toshiba Corp, Kawasaki, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 5 S期
关键词：
Heterospike - Indium gallium aluminum phosphide - Valence band discontinuity - Voltage drop;
D O I：
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学科分类号：
摘要：
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页码：1919 / 1922
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