Strained single-quantum-well AlGaInP laser diodes with asymmetric waveguiding structure

被引：0
|
作者：
Kawanaka, Satoshi [1 ]
Tanaka, Toshiaki [1 ]
Yanagisawa, Hironori [1 ]
Yano, Shinichiro [1 ]
Minagawa, Shigekazu [1 ]
机构：
[1] Hitachi Ltd, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 1 B期
关键词：
Semiconductor lasers;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：609 / 613
相关论文
共 50 条
  • [21] STRAINED SINGLE-QUANTUM-WELL INGAAS LASERS WITH A THRESHOLD CURRENT OF 0.25 MA
    CHEN, TR
    ENG, LE
    ZHAO, B
    ZHUANG, YH
    YARIV, A
    APPLIED PHYSICS LETTERS, 1993, 63 (19) : 2621 - 2623
  • [22] Room-temperature lasing operation of GaInNAs-GaAs single-quantum-well laser diodes
    Kitatani, T
    Kondow, M
    Nakatsuka, S
    Yazawa, Y
    Okai, M
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) : 206 - 209
  • [23] ALINGAAS-ALGAAS STRAINED SINGLE-QUANTUM-WELL DIODE-LASERS
    WANG, CA
    WALPOLE, JN
    CHOI, HK
    MISSAGGIA, LJ
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (01) : 4 - 5
  • [24] Cavity parameters of ZnCdSe/ZnSe single-quantum-well separate-confinement-heterostructure laser diodes
    Tsujimura, Ayumu
    Yoshii, Shigeo
    Hayashi, Shigeo
    Ohkawa, Kazuhiro
    Mitsuya, Tsuneo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (12 A): : 1750 - 1752
  • [25] Optimization of barrier structure for strain-compensated multiple-quantum-well AlGaInP laser diodes
    Huang, Man-Fang
    Sun, Yu-Lung
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (10A): : 7600 - 7604
  • [26] Optimization of barrier structure for strain-compensated multiple-quantum-well AlGaInP laser diodes
    Huang, Man-Fang
    Sun, Yu-Lung
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (10 A): : 7600 - 7604
  • [27] A CORNER REFLECTOR INGAAS-GAAS STRAINED-LAYER SINGLE-QUANTUM-WELL COUPLED LASER ARRAY
    FANG, ZJ
    SMITH, GM
    FORBES, DV
    COLEMAN, JJ
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (01) : 10 - 12
  • [28] Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes
    Chichibu, S.F.
    Azuhata, T.
    Sota, T.
    Mukai, T.
    Nakamura, S.
    1600, American Inst of Physics, Woodbury, NY, USA (88):
  • [29] Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes
    Chichibu, SF
    Azuhata, T
    Sota, T
    Mukai, T
    Nakamura, S
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (09) : 5153 - 5157
  • [30] Optical and electrical characteristics of single-quantum-well InGaN light emitting diodes
    Perlin, P
    Osinski, M
    Eliseev, PG
    III-V NITRIDES, 1997, 449 : 1173 - 1178
12345