Effect of beam voltage on the properties of aluminium nitride prepared by ion beam assisted deposition

被引：0
|
作者：
Edgar, J.H. [1 ]
Carosella, C.A. [1 ]
Eddy Jr., C.R. [1 ]
Smith, D.T. [1 ]
机构：
[1] Kansas State Univ, Manhattan, United States
来源：
| 1996年 / Chapman & Hall Ltd, London, United Kingdom卷 / 07期
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摘要：
Semiconducting aluminum compounds
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