Strained layer Inx Ga1-x As/GaAs and InxGa1-x As/InyGA1-y P multiple-quantum-well optical modulators grown by gas-source MBE

被引：0
|
作者：
Kim, J.W. [1 ]
Chen, C.W. [1 ]
Vogt, T.J. [1 ]
Woods, L.M. [1 ]
Robinson, G.Y. [1 ]
Lile, D.L. [1 ]
机构：
[1] Colorado State Univ, Fort Collins, United States
来源：
IEEE Photonics Technology Letters | 1993年 / 5卷 / 09期
关键词：
Crystal growth - Molecular beam epitaxy - Quantum electronics - Semiconducting gallium compounds - Semiconductor quantum wells;
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学科分类号：
摘要：
The first results on low-power p-i-n diode modulator structures using strained multiple quantum wells (MQW's) of InGaAs/InGaP grown by gas-source molecular beam epitaxy (MBE) on GaAS are presented. A comparison of transmission, reflection, and photocurrent spectra for these nonresonant devices with those fabricated from InGaAs/GaAs indicates larger modulation, with a maximum change in reflection of > 42% observed at 5-V bias at a wavelength of 0.96 μm.
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页码：967 / 989
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